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- W2011122924 abstract "α-Si3N4 nanowires, β-SiC nanowires and SiO2 amorphous nanowires are synthesized via the direct current arc discharge method with a mixture of silicon, activated carbon and silicon dioxide as the precursor. The α-Si3N4 nanowires, β-SiC nanowires and SiO2 amorphous nanowires are about 50–200 nm in stem diameter and 10–100 μm in length. α-Si3N4 nanowires and β-SiC nanowires consist of a solid single-crystalline core along the [0 0 1] and [1 1 1] directions, respectively, wrapped within an amorphous SiOx layer. The direct current arc plasma-assisted self-catalytic vapor–solid and/or vapor–liquid–solid (VLS) growth processes are proposed as the growth mechanism of the nanowires." @default.
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- W2011122924 date "2010-07-01" @default.
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- W2011122924 title "A simple method to synthesize α-Si3N4, β-SiC and SiO2 nanowires by carbothermal route" @default.
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- W2011122924 doi "https://doi.org/10.1016/j.jcrysgro.2010.03.039" @default.
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