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- W2011123057 endingPage "646" @default.
- W2011123057 startingPage "634" @default.
- W2011123057 abstract "Abstract The application of Raman scattering for characterizing porous semiconductors is reviewed. For structural units of only a few nanometers in size, as observed in por‐Si or por‐Ge, phonon confinement effects appear that can be used for size determinations. In polar porous semiconductors, surface‐related phonons (Fröhlich modes) between the TO and LO phonons appear. These surface phonons couple with the plasmons of free charge carriers in the porous medium. Examples are given of porous layers on III–V semiconductors in which Raman scattering is used to study charge carrier depletion. For theoretical treatment, the effective medium theory is used, taking into account the morphology with parallel pores or nanocolumns with radii down to a few tens of nanometers. Copyright © 2007 John Wiley & Sons, Ltd." @default.
- W2011123057 created "2016-06-24" @default.
- W2011123057 creator A5029334332 @default.
- W2011123057 date "2007-04-11" @default.
- W2011123057 modified "2023-10-16" @default.
- W2011123057 title "Raman scattering of nanoporous semiconductors" @default.
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