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• W2011138341 abstract "A modified version of the effective heat of formation (EHF) model of Pretorius et al. is presented to predict phase formation in codeposited silicon-transition metal films. The EHF model predicts that the first Si–M (transition metal) phase to form in thin-film diffusion couples is the phase with the most negative EHF at the composition of the lowest temperature eutectic (i.e., at the growth interface). Combinatorial thin-film libraries of codeposited Si–M produced using the modified composition spread method of Dahn et al. consist of intimately mixed Si and M atoms. We propose the entire film can be considered as the growth interface and that the Si–M phase with the most negative EHF at a given composition is present. Film nanostructure as a function of composition can then be directly determined from EHF diagrams (assuming regions of Si are amorphous). This information, when combined with the assumption that all Si–M phases are inactive, can be used to predict the specific capacity of all Si-(transition or rare-earth metal) systems in cells as a function of composition." @default.
• W2011138341 created "2016-06-24" @default.
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• W2011138341 date "2007-01-01" @default.
• W2011138341 modified "2023-09-27" @default.
• W2011138341 title "Method to Predict Phase Formation and Specific Capacity for Lithium in Codeposited Silicon-Transition Metal Thin Films" @default.
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• W2011138341 doi "https://doi.org/10.1149/1.2409860" @default.
• W2011138341 hasPublicationYear "2007" @default.
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