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- W2011181752 abstract "We summarize recent results on the impact of defects on the electronic properties of single-wall carbon nanotubes. We probe the influence of defects on electron transport in CNFETs by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). Depletion surface potential of individual defects is quantified from the SGM-imaged defect radius as a function of tip bias voltage. This provides a measure of the Fermi level at the defect with zero tip voltage. In the off state, transport is first dominated by barriers at depleted defects. It becomes diffusive as the CNFET is turned on, and finally is quasi-ballistic in the regime of degenerate electrostatic doping. Metallic nanotubes with good contacts show a metal-to-insulator crossover as the gate voltage is varied. In the metallic state we see quantitative agreement with the twiston scattering picture." @default.
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- W2011181752 date "2002-06-01" @default.
- W2011181752 modified "2023-10-18" @default.
- W2011181752 title "ROLE OF DEFECTS IN CARBON NANOTUBE CIRCUITS" @default.
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- W2011181752 doi "https://doi.org/10.1142/s0219581x02000292" @default.
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