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W2011184736 abstract "GaN Bipolar Junction Transistors and GaN/AlGaN Heterojunction Bipolar Transistors were characterized at temperatures up to 250–300°C and power densities >10 kW cm−2. The breakdown voltage in both types of devices decreased at higher temperatures, with less degradation in the BJTs. At low current levels, the offset voltages were 2–3 V but increased at higher currents." @default.
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W2011184736 date "2000-04-01" @default.
W2011184736 modified "2023-10-01" @default.
W2011184736 title "High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors" @default.
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W2011184736 doi "https://doi.org/10.1016/s0038-1101(99)00291-9" @default.
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