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- W20112076 abstract "Abstract : The goals of this program have been taken up by major efforts at IBM Watson Research Center, Intel Portland Technology Development Motorola and Texas Instruments. Our program has interacted with all of these programs except for the effort at Motorola. In particular the following areas have been addressed. First, the behavior of the semiconductor-insulator interface formed between silicon and cerium oxide has been quantified. Most important, the trap state density, interface roughness and conduction band offset with silicon are critical parameters in determining cerium oxide's usefulness for MOS applications. Secondly, more exact knowledge of the nature of cerium oxide in thin film form has been ascertained in order to predict its applicability as a tunnel barrier for a silicon heterostructure." @default.
- W20112076 created "2016-06-24" @default.
- W20112076 creator A5011935661 @default.
- W20112076 date "2002-11-02" @default.
- W20112076 modified "2023-09-23" @default.
- W20112076 title "Development and Application of Heterojunctions for Nanoelectronics for Silicon" @default.
- W20112076 doi "https://doi.org/10.21236/ada414212" @default.
- W20112076 hasPublicationYear "2002" @default.
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