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• W2011208180 abstract "This paper describes a fabrication and electrical properties of titanium thin-film circuit elements. The sputtering apparatus consists of a cold-cathode magnetron geometry which works at an atmosphere of low gas pressure below 10−2 torr and provides a uniform thin film with high reproducibility. The capacitors offer 0.1–1 μF/cm2, a breakdown voltage of 15-5 V, TCC values of +100 to +450 ppm/°C and large R-C product. Reactively sputtered titanium nitride resistors has a resistivity of 300 μ/cm and TCR values of −10 to +90 ppm/°C. The rectifiers offer a forward current density of 1 A/cm2, a reverse breakdown voltage of 4–7 V and a rectifying ratio of 105 at 1·5 V. A capacitance of rectifier is about 1 μF/cm2, so the rectifiers are restricted in a fairly low frequency use. The technique of producing the thin-film elements has a potential in high reliability for routine production of thin-film microcircuits." @default.
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• W2011208180 date "1967-08-01" @default.
• W2011208180 modified "2023-09-27" @default.
• W2011208180 title "Reactively sputtered titanium resistors, capacitors and rectifiers for microcircuits" @default.
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• W2011208180 doi "https://doi.org/10.1016/0026-2714(67)90262-4" @default.
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