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• W2011279415 abstract "The conductivity of WSe 2 , MoS 2 , WS 2 thin films, obtained by solid state reaction between the metal and the chalcogen sequentially deposited, is controlled by grain boundary scattering mechanisms. A mild annealing treatment at 373 K for 1/2 h to 6 h under iodine atmosphere improves the conductivity of the films. In the case of WSe 2 , which gives the better results, the room temperature conductivity can be multiplied by 25. If the conductivity is improved, its dependence with the temperature demonstrates that the conductivity process is still controlled by grain boundary scattering mechanisms. All the conductivity results are interpreted with the help of a grain boundary model. Barrier height fluctuations at the grain boundary are introduced to have experimental and theoretical data fit together. After iodine treatment the mean barrier height has decreased and the homogeneity of the films is improved. These improvements are very promising for photovoltaic application since it appears that iodine passivates defects at the grain boundaries." @default.
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• W2011279415 date "1996-12-01" @default.
• W2011279415 modified "2023-10-17" @default.
• W2011279415 title "Improvement of the Electrical Properties of Layered Semiconductor Thin Films by Iodine Treatment" @default.
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• W2011279415 doi "https://doi.org/10.1051/jp3:1996208" @default.
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