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- W2011285229 abstract "The gate structure dependence of the blocking capability of lateral power metal-oxide-semiconductor field-effect-transistors (MOSFETs) on a silicon-on-insulator (SOI) film is investigated. Experimental results of the breakdown voltage with varying the gate electrode and gate oxide lengths are presented, and are compared with those of the devices fabricated on a n-type substrate. The breakdown voltage of the SOI devices is insensitive to the surface design around the gate structure, which is quite different from that of the devices on the n-type substrate." @default.
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- W2011285229 date "1997-09-01" @default.
- W2011285229 modified "2023-10-17" @default.
- W2011285229 title "Measurement of the Breakdown Voltage of Lateral Power Metal-Oxide-Semiconductor Field-Effect-Transistors on a Silicon-on-Insulator Film with Varying the Surface Design around the Gate Region" @default.
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- W2011285229 doi "https://doi.org/10.1143/jjap.36.5516" @default.
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