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• W2011423805 abstract "We report the use of partially relaxed tensile as well as compressively strained GaInP layers for lateral ordering of InAs quantum dots with the aid of misfit dislocation networks. The strained layers and the InAs QDs were characterized by means of atomic force microscopy, scanning electron microscopy, and X-ray reciprocal space mapping. The QD-ordering properties of compressive GaInP are found to be very similar with respect to the use of compressive GaInAs, while a significantly stronger ordering of QDs was observed on tensile GaInP. Furthermore, we observed a change of the major type of dislocation in GaInP layers as the growth temperature was modified." @default.
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• W2011423805 date "2010-08-20" @default.
• W2011423805 modified "2023-09-29" @default.
• W2011423805 title "Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP" @default.
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• W2011423805 doi "https://doi.org/10.1007/s11671-010-9747-2" @default.
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