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- W2011477524 abstract "ZrOxNy thin films have been prepared by radio frequency magnetron sputtering at various substrate temperatures. The effect of substrate temperature on structural, optical properties and energy-band alignments of as-deposited ZrOxNy thin films are investigated. Atomic force microscopy results indicate the decreased root-mean-square (rms) values with substrate temperature. Fourier transform infrared spectroscopy spectra indicate that an interfacial layer has been formed between Si substrate and ZrOxNy thin films during deposition. X-ray photoelectron spectroscopy and spectroscopy ellipsometry (SE) results indicate the increased nitrogen incorporation in ZrOxNy thin films and therefore, the decreased optical band gap (Eg) values as a result of the increased valence-band maximum and lowered conduction-band minimum." @default.
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- W2011477524 date "2008-06-01" @default.
- W2011477524 modified "2023-09-26" @default.
- W2011477524 title "Structural, optical properties and band gap alignments of ZrOxNy thin films on Si (100) by radio frequency sputtering at different deposition temperatures" @default.
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- W2011477524 doi "https://doi.org/10.1016/j.apsusc.2008.02.073" @default.
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