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• W2011508159 abstract "This paper describes that Ge plays an enabler to integrate active photonic devices on a Si platform. In spite of the large lattice mismatch of ~ 4% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared active photonic devices, i.e., photodiodes, optical modulators and light emitters, are described. Several issues on the device physics as well as the integration with Si electronics are discussed." @default.
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• W2011508159 date "2010-01-01" @default.
• W2011508159 modified "2023-09-30" @default.
• W2011508159 title "Germanium for silicon photonics" @default.
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• W2011508159 doi "https://doi.org/10.1016/j.tsf.2009.10.062" @default.
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