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• W2011519175 abstract "This article presents research on the applications of SU-8-based structural material for three different types of semiconductor processing. The processing method using SU-8 as a cost-effective final protection layer replaces the traditional SiNx or SiO2 thin films in integrated passive devices (IPDs). To evaluate the moisture resistance of the SU-8 films, SU-8 and SiNx are subjected to 1,000 h, 85°C, 85% relative humidity (RH) reverse bias tests and the results are compared. SU-8 is also applied as an isolation layer in light-emitting diode (LED) module fabrication processing, which provides electrical isolation and protection for the ground Cu/Ni/Au-plated metal interconnection. Finally, SU-8 is used in high electron mobility transistor (HEMT) input/output matching circuit as a dielectric layer for the realization of DC block capacitor." @default.
• W2011519175 created "2016-06-24" @default.
• W2011519175 creator A5010828795 @default.
• W2011519175 creator A5046078938 @default.
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• W2011519175 date "2013-07-09" @default.
• W2011519175 modified "2023-10-16" @default.
• W2011519175 title "SU-8-Based Structural Material for Microelectronic Processing Applications" @default.
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• W2011519175 doi "https://doi.org/10.1080/10426914.2013.792409" @default.
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