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- W2011567187 abstract "Abstract Ultra-soft X-ray emission spectroscopy (USXES) and X-ray diffraction were applied for the investigation of solid phase interaction in thin-film structure Pt/Si(111). Vacuum annealing at temperatures from 530 to 770 K for periods from 10 to 240 min resulted in the formation of Pt 12 Si 5 /Si, Pt 12 Si 5 /PtSi/Si and PtSi/Si structures. After irradiation with a xenon lamp in air, a Pt+SiO 2 /Pt 12 Si 5 /PtSi/Si thin-film structure was observed. Ultra-soft X-ray emission spectra of platinum N 6,7 and silicon L 2,3 from Pt 12 Si 5 and PtSi thin films were obtained. The results are compared with spectra measured on elementary platinum and silicon. © 1997 Elsevier Science S.A. All rights reserved." @default.
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- W2011567187 date "1997-04-01" @default.
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- W2011567187 title "Silicide formation in thin film Pt–Si(111) structure by USXES data" @default.
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- W2011567187 doi "https://doi.org/10.1016/s0040-6090(96)09209-7" @default.
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