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- W2011567607 abstract "Films consisting of TiO2 and IVb metal oxides (MO2: M = Si, Ge and Sn) have been prepared at deposition temperatures of 400 and 900°C by the continuous and intermittent CVD techniques of TiCl4-MCl4-H2O systems, in order to investigate the effect of co-deposition of MO2 on the polymorphism of CVD-TiO2. The co-deposition of amorphous SiO2 or GeO2 facilitated the form ation of the anatase type of TiO2. In a TiCl4-SnCl4-H2O system, crystalline SnO2 (cassiterite) was co-deposited with TiO2 and the formation of the rutile type of TiO2 was promoted." @default.
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- W2011567607 date "1981-04-01" @default.
- W2011567607 modified "2023-09-26" @default.
- W2011567607 title "Effect of co-deposition of IVb metal oxides on the polymorphism of chemically vapor-deposited TiO2" @default.
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- W2011567607 doi "https://doi.org/10.1016/0022-0248(81)90203-7" @default.
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