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• W2011569215 startingPage "67" @default.
• W2011569215 abstract "Epitaxial ZnO films have been grown on Si (111) substrates by molecular beam epitaxy using ozone as an oxygen source. An initial deposition of a Zn layer followed by its oxidation produces a superior template for the subsequent ZnO growth. The reflection high-energy electron diffraction measurement suggests that the initial Zn layer and ZnO film are rotated by 30° with respect to the Si substrate orientation. The X-ray diffraction measurement reveals that the as-grown ZnO films are strongly c-oriented and include no rotational domains. Although there exists a small trace of ZnO (1011) domains, it easily disappears upon annealing at 1100°C for 1 min after growth. Low-temperature photoluminescence measurements indicate that the emission property is improved significantly after annealing. The bound-exciton emission at 3.354 eV is dominant and its full-width at half maximum is as small as 11 meV." @default.
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• W2011569215 date "2003-01-15" @default.
• W2011569215 modified "2023-10-09" @default.
• W2011569215 title "Molecular Beam Epitaxial Growth of ZnO on Si Substrate Using Ozone as an Oxygen Source" @default.
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• W2011569215 doi "https://doi.org/10.1143/jjap.42.67" @default.
• W2011569215 hasPublicationYear "2003" @default.
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