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- W2011619418 abstract "Abstract Strained layers of GaP/GaAsP/GaP grown on both (100) and (111) surfaces and InP/GaAs/InP have been grown by MOVPE. These layers have been investigated by photoluminescence and cathodoluminescence at low temperatures. Photoluminescence measurements show emission from all the structures. In the GaP/GaAsP/GaP structures the emission peaks are attributed to excitons recombining at donor sites, free excitons, and recombination of charge carriers localized by alloy fluctuations. In the InP/GaAs/InP structures emission attributed to electrons in InP recombining with holes in the strained GaAs layer is seen together with emissions which are probably related to interface defects. Using cathodoluminescence the formation of dislocations in the GaP/GaAsP/GaP system has been investigated. A significant difference is seen for growth on (100) and (111) surfaces. It is concluded that in both cases 60° dislocations are responsible for relieving the strain. It is demonstrated that a concentration difference of 2% As increases the dislocation density from 0 to 100 dislocations/mm in the GaP/GaAsP/GaP system grown on the (100) surface. From similar cathodoluminescence studies of the InP/GaAs/InP structures a critical thickness of above 30Ais deduced." @default.
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- W2011619418 date "1991-01-01" @default.
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- W2011619418 title "MOVPE growth and characterization of strained layers" @default.
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- W2011619418 doi "https://doi.org/10.1016/0022-0248(91)90503-w" @default.
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