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- W2011640794 abstract "Single-crystal Ge island arrays on SiO2/Si structures are desired to merge advanced Ge devices into Si large scale integrated circuit (LSI). We have developed the rapid-melting-growth process of amorphous Ge by using Ni-imprint-induced Si (111) fine crystals (∼1 μmϕ) as the growth seed. Arrays of (111) oriented single-crystal Ge islands with device size (∼10 μmϕ) are uniformly fabricated on SiO2/Si substrates. The cross-sectional transmission electron microscopy observation reveals that Ge islands include no dislocation or stacking fault. This method opens up a possibility to achieve hybrid SiGe-LSI with multifunctions." @default.
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- W2011640794 date "2009-09-14" @default.
- W2011640794 modified "2023-09-23" @default.
- W2011640794 title "Defect-free single-crystal Ge island arrays on insulator by rapid-melting-growth combined with seed-positioning technique" @default.
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- W2011640794 doi "https://doi.org/10.1063/1.3231925" @default.
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