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• W2011677536 abstract "A systematic study of the level positions of intrinsic and carbon defects in ${mathrm{SiO}}_{2}$ is presented, based on density functional calculations with a hybrid functional in an $ensuremath{alpha}$-quartz supercell. The results are analyzed from the point of view of the near interface traps (NIT), observed in both $mathrm{SiC}∕{mathrm{SiO}}_{2}$ and $mathrm{Si}∕{mathrm{SiO}}_{2}$ systems, and assumed to have their origins in the oxide. It is shown that the vacancies and the oxygen interstitial can be excluded as the origin of such NIT, while the silicon interstitial and carbon dimers give rise to gap levels in the energy range inferred from experiments. The properties of these defects are discussed in light of the knowledge about the $mathrm{SiC}∕{mathrm{SiO}}_{2}$ interface." @default.
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• W2011677536 date "2005-09-20" @default.
• W2011677536 modified "2023-10-12" @default.
• W2011677536 title "Defects in<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mi>SiO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>as the possible origin of near interface traps in the<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:mi>SiC</mml:mi><mml:mo>∕</mml:mo><mml:msub><mml:mi>SiO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>system: A systematic theoretical study" @default.
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• W2011677536 doi "https://doi.org/10.1103/physrevb.72.115323" @default.
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