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• W2011781497 abstract "Thermal interdiffusion in Si/Ge layered structures shows large variations in diffusivity between Si/Ge amorphous multilayer films and symmetrically strained superlattice structures. Amorphous layered structures exhibit much higher diffusivities and much lower activation energy for interdiffusion. We have used Rutherford backscattering (RBS) and transmission electron microscopy (TEM) to (1) investigate the mixing behavior in Ge/Si structures under ion mixing condition, (2) study the dependence of mixing on the microstructure of the multilayered films (amorphous layers vs. crystalline layers) and (3) study the effects of electrically active ions (e.g. A.s+ ions) on ion mixing behavior. We found that the ion mixing efficiency of the Si/Ge system shows two regimes upon ion irradiation: a thermally activated regime where the efficiency of mixing increases exponentially with the irradiation temperature and a nonthermal regime where the amount of mixing is independent of the irradiation temperature. The critical temperature for the onset of the thermally activated regime is found to be around 200°C. Comparison between thermal interdiffusion and ion-induced intermixing in the Si/Ge system is also made." @default.
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• W2011781497 date "1991-07-01" @default.
• W2011781497 modified "2023-10-01" @default.
• W2011781497 title "Ion mixing in amorphous and crystalline Si/Ge layered structures" @default.
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• W2011781497 doi "https://doi.org/10.1016/0168-583x(91)95748-3" @default.
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