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• W2011811961 abstract "Silicon oxy-nitride (SiOxNy) films prepared by radio-frequency magnetron sputtering were investigated as an anode modifier in organic light-emitting diodes (OLEDs). SiOxNy films were deposited on the indium tin oxide (ITO) anode of an OLED with a configuration of ITO/SiOxNy/α-naphtylphenyliphenyl diamine (NPB)/8-hydroxyquinoline aluminum (AlQ)/Mg:Ag. By varying the argon and oxygen flow ratio during deposition of the SiOxNy films, devices with improved electroluminescent performance and operation lifetime were obtained. Atomic compositions of the SiOxNy films were analyzed with X-ray photoelectron spectroscopy. The best device with the optimized SiOxNy film showed a half brightness lifetime 5 times better than that of the control device." @default.
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• W2011811961 date "2008-09-01" @default.
• W2011811961 modified "2023-09-27" @default.
• W2011811961 title "Lifetime improvement of organic light-emitting diodes using silicon oxy-nitride as anode modifier" @default.
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• W2011811961 doi "https://doi.org/10.1016/j.tsf.2008.04.028" @default.
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