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• W2011830406 abstract "Abstract This is a report on the initial behaviour of homoepitaxial growth of Si on Si(111) based on reflection high-energy electron diffraction (RHEED) intensity measurements and kinetic solid-on-solid Monte Carlo simulations. A quenching of the first RHEED-oscillation corresponding to the first double layer is observed over a wide temperature range. This suppression could be simulated by introducing a defect related, extra activation energy for growth on top of the first and subsequently formed bilayers (BL). As a result of the increased activation energy, the interface width was shown to increase with the substrate temperature at the beginning of the deposition. The gradual return to regular BL-by-BL growth was accomplished by assigning an increased hopping probability to adatoms situated on top of step edges." @default.
• W2011830406 created "2016-06-24" @default.
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• W2011830406 date "1994-12-01" @default.
• W2011830406 modified "2023-09-27" @default.
• W2011830406 title "Initial stages of Si-molecular beam epitaxy on Si(111) studied with reflection high-energy electron diffraction intensity measurements and Monte Carlo simulations" @default.
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• W2011830406 doi "https://doi.org/10.1016/0039-6028(94)90184-8" @default.
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