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• W2011842585 abstract "An alternative approach to the study of crystallization process of the AIIIBV semiconductor compounds taking place at the “crystal–melt” interface has been considered in this paper. The influence of the short-range order in the interface region on the crystallization process has been studied at the atomic level. An elementary growth cell representing a system of five atoms, two of them are AIII atoms belonging to a substrate, two other AIII atoms and the fifth BV pertain to a solution-melt, has been proposed. Positions of the AIII atoms belonging to the solution-melt are distributed in such a way that the resulting potential of the BV atom proves to be double well. Transitions of the BV atoms in such double-well potentials lead to crystallization. Taking the semiconductor compound GaP as an example, the potential energies of the pair interaction in the P2, GaP and Ga2 molecules are determined as functions of the interatomic distance. Based on these function dependences, the mean values of the double-well potential parameters are calculated. This allows to determine the mean rate of the elementary crystallization events at the interface. Some problems of the growing crystal morphology are discussed." @default.
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• W2011842585 date "2008-07-01" @default.
• W2011842585 modified "2023-09-27" @default.
• W2011842585 title "The influence of local order at a crystal–melt interface on the AIIIBV crystal growth" @default.
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• W2011842585 doi "https://doi.org/10.1016/j.jcrysgro.2008.04.051" @default.
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