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• W2011844950 abstract "InAs quantum dot lasers grown on (311)B InP substrates with AlGaInAs barriers have been fabricated and studied. A large decrease of the threshold current with temperature was observed from 110to140K. In the same temperature range, electroluminescence spectra showed a shape change, an energy shift with temperature, which cannot be fitted with a Varshni law, and a large decrease of the laser linewidth. These results can be related to a delayed thermalisation of carriers within quantum dot ensemble." @default.
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• W2011844950 date "2007-12-24" @default.
• W2011844950 modified "2023-09-27" @default.
• W2011844950 title "Negative characteristic temperature of long wavelength InAs∕AlGaInAs quantum dot lasers grown on InP substrates" @default.
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• W2011844950 doi "https://doi.org/10.1063/1.2827177" @default.
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