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• W2011883445 abstract "For feasible study of opto-electrical application regarding to oxide semiconductor, we implemented the N doped ZnO growth using a atomic layer deposition technique. The p-type ZnO deposition, necessary for ZnO-based optoelectronics, has considered to be very difficulty due to sufficiently deep acceptor location and self-compensating process on doping. Various sources of N such as N2, NH3, NO, and NO2 and deposition techniques have been used to fabricate p-type ZnO. Hall measurement showed that p-type ZnO was prepared in condition with low deposition temperature and dopant concentration. From the evaluation of photoluminescence spectroscopy, we could observe defect formation formed by N dopant. In this paper, we exhibited the electrical and optical properties of N-doped ZnO thin films grown by atomic layer deposition with NH3OH doping source." @default.
• W2011883445 created "2016-06-24" @default.
• W2011883445 creator A5067683921 @default.
• W2011883445 date "2014-10-01" @default.
• W2011883445 modified "2023-09-25" @default.
• W2011883445 title "Nitrogen Doping Characterization of ZnO Prepared by Atomic Layer Deposition" @default.
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• W2011883445 doi "https://doi.org/10.4313/jkem.2014.27.10.642" @default.
• W2011883445 hasPublicationYear "2014" @default.
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