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- W2011971732 abstract "A low noise high cutoff frequency dual-gate MOS-FET with a Mo-gate is fabricated using gate-masked ion-implantation. In the high frequency region, low noise performance is achieved with a short channel and minimum resistive parasitics such as gate and source resistances. To reduce the effect of the gate resistance, a new comb type structure with low resistive Mo film is realized. The dual-gate FET with a channel length of 1.3 µ as the 1st channel and 2.5 µ as the 2nd channel, a channel width of 1.2 mm and a gate oxide thickness of 600 Å, was operated at 800 MHz with a minimum noise figure of 2.4 dB and a power gain of 19 dB. Good cross modulation characteritic was also confirmed." @default.
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- W2011971732 date "1976-01-01" @default.
- W2011971732 modified "2023-09-25" @default.
- W2011971732 title "Short Channel, Low Noise UHF MOS-FET's Utilizing Molybdenum-Gate Masked Ion-Implantation" @default.
- W2011971732 doi "https://doi.org/10.7567/jjaps.15s1.201" @default.
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