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- W2011995931 abstract "Aluminium nitride films were deposited low pressure chemical vapour deposition (LPCVD) at temperatures ranging from 550 to 800 C. The precursors used were AlCl3, NH3H2. Growth rates and depletion effects were measured. At moderate temperatures, the growth rate of the AlN films made by this LPCVD process, using as a starting compound, was high compared to growth rates found by other investigators. The films were analysed by electron spectroscopy for chemical analyses (ESCA) X-ray diffraction. IR spectroscopy and scanning electron microscopy (SEM). In order to verify corrosion resistance against molten aluminium alloys a graphite crucible was coated with AlN. An Al-Mg alloy (3 wt. Mg) was melted and kept at 800 C for 48 hours in this crucible in a helium atmosphere. The AlN film stayed totally intact and Al4C3 formation did not occur." @default.
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- W2011995931 date "1989-02-01" @default.
- W2011995931 modified "2023-09-25" @default.
- W2011995931 title "Aluminium nitride films made by low pressure chemical vapour deposition: Preparation and properties" @default.
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- W2011995931 doi "https://doi.org/10.1016/0040-6090(89)90707-4" @default.
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