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- W2012029461 abstract "The recent progress on Raman scattering in GaN single crystals and GaN/AlN heterostructures is reviewed. Anti-Stokes Raman scattering is used to determine electron-phonon scattering time and decay time constant for longitudinal-optical phonons. In a typical high electron mobility transistor based on GaN/AlN heterostructures, strong resonances are reached for the first-order and second-order Raman scattering processes. Therefore, both Stokes and anti-Stokes Raman intensities are dramatically enhanced. The feasibility for laser cooling of a nitride structure is studied. A further optimization will enable us to reach the threshold for laser cooling. Raman scattering have potential applications in up-conversion lasers and laser cooling of nitride ultrafast electronic and optoelectronic devices." @default.
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- W2012029461 date "2013-01-01" @default.
- W2012029461 modified "2023-10-18" @default.
- W2012029461 title "Resonant Raman scattering in GaN single crystals and GaN-based heterostructures: feasibility for laser cooling" @default.
- W2012029461 doi "https://doi.org/10.3788/col201311.011901" @default.
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