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• W2012034120 abstract "Silicon wafers implanted with arsenic doses from 1×1015 to 2×1016 As/cm2 were characterized with the following methods: four point probe, bevel and stain, secondary ion mass spectroscopy, spreading resistance, incremental sheet resistance, and infrared transmittance and reflectance. The results are compared and the capability of each method is discussed." @default.
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• W2012034120 date "1981-10-01" @default.
• W2012034120 modified "2023-10-17" @default.
• W2012034120 title "Comparison of characterization methods for As-doped silicon" @default.
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• W2012034120 doi "https://doi.org/10.1063/1.328518" @default.
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