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• W2012038127 abstract "A concept for full-wafer processing (FWP) and full-wafer testing (FWT) for semiconductor laser fabrication in the AlGaAs-GaAs material system is presented. The approach is based on chemically assisted ion beam etching for the laser-mirror formation. Record values for mirror scattering, optimum mirror reflectivity, and equivalence to cleaved mirrors in terms of laser threshold and efficiency have been achieved. Promising results for uniformity and reproducibility for major laser diode characteristics on processed 2-in wafers have been found. The FWP technology has been extensively used for designing test sites to determine various materials, process, and laser parameters, such as sheet resistance, ridge dimensions, lithographic alignment errors, mirror surface leakage, etc.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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• W2012038127 date "1991-06-01" @default.
• W2012038127 modified "2023-10-17" @default.
• W2012038127 title "Full-wafer technology-A new approach to large-scale laser fabrication and integration" @default.
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• W2012038127 doi "https://doi.org/10.1109/3.89949" @default.
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