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- W2012068395 abstract "For Si-nitride/thin Si-oxide/p-Si structures as used for MIS/IL solar cells, the inversion layer (IL) sheet resistance R□ and the effective electron mobility μeff were determined as a function of the positive nitride charge density QN/q up to values > 1013 cm−2. Special low-temperature-processed MNOS (metal-nitride-oxide-silicon) transistors with MIS contacts for source and drain were used for the measurements. The μeff values were ranging from 100 to 400 cm2/Vs, depending on QN and surface preparation. Despite the decrease of μeff with increasing nitride charge density, values of R□ as low as 2.2 kΩ/□ could be obtained. By oxidation of the Si surface at temperatures ≤600°C(dox ∼ 1.8 nm) prior to the nitride deposition, the μeff values could be improved by 50% compared to those when the native oxide was present. Grain boundaries in polycrystalline Si (Silso) did not affect R□. It could be shown that Coulomb scattering plays a minor role at high values of QN." @default.
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- W2012068395 date "1983-10-01" @default.
- W2012068395 modified "2023-10-16" @default.
- W2012068395 title "Properties of inversion layers for MIS/IL solar cells studied on low-temperature-processed MNOS transistors" @default.
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- W2012068395 doi "https://doi.org/10.1016/0038-1101(83)90075-8" @default.
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