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• W2012073076 abstract "The radiation damage introduced in n-GaAs by 4-MeV N+ implantation at a dose of 1×1015 cm−2 has been analyzed using micro-Raman spectroscopy. Implantation followed by annealing at 600 °C was found to produce a strongly compensated near-surface layer possessing a high crystalline quality. At the same time a pronounced disorder was found underneath the high-resistance layer which enables the fabrication of 2.5-μm thick free-standing membranes using selective electrochemical etching techniques." @default.
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• W2012073076 date "1997-02-17" @default.
• W2012073076 modified "2023-09-23" @default.
• W2012073076 title "The characteristics of high-resistance layers produced in n-GaAs using MeV-nitrogen implantation for three-dimensional structuring" @default.
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• W2012073076 doi "https://doi.org/10.1063/1.118222" @default.
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