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• W2012081858 abstract "We characterize the chemical constitutents of high dose implanted deep ultraviolet photoresist before and after dual-mode oxygen plasma processing, where a remote rf-plasma source is operated simultaneously with rf bias. Raman spectroscopy indicates that the organic composition of the crust comprises a mixture of sp2 graphite and sp3 diamondlike carbon structures. High dose ion implantation reduces the hydrogen content by about 50 at. % as measured by hydrogen forward scattering and explains the reduced optical emission signal intensity observed during crust removal. The crust thicknesses extracted from the secondary-ion-mass spectroscopy profile correspond well to prior scanning electron microscopy characterization [Kawaguchi et al., J. Vac. Sci. Technol. B (submitted)] and support the existence of a transitional layer between the hardened crust and the underlying photoresist. Angle-resolved x-ray photoelectron spectroscopy analysis of arsenic implanted photoresist shows that dual-mode plasma processing causes substantial oxidation deep into the bulk. This result contrasts with downstream plasma processing, which proceeds by a near-surface mechanism. In addition, surface arsenic levels increase by an order of magnitude, which suggests that ion bombardment does not significantly sputter the dopant." @default.
• W2012081858 created "2016-06-24" @default.
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• W2012081858 date "2006-03-01" @default.
• W2012081858 modified "2023-10-18" @default.
• W2012081858 title "Surface characterization of ion-enhanced implanted photoresist removal" @default.
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• W2012081858 doi "https://doi.org/10.1116/1.2178367" @default.
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