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• W2012085026 abstract "We present a low temperature diffusion study on the formation of intermixing zones between periodic, nanometer thick films consisting of Mo and Si. An in-situ X-ray diffraction method at pm-accuracy was developed, including a model that explains the period change observed by diffusion limited interface growth. Experiments were carried out on Mo/Si multilayered films in the temperature range of 100–275 °C, resulting in the determination of diffusion coefficients. Temperature scaling showed Arrhenius-type behavior of the diffusion constant over the entire temperature range, with an activation energy of 0.5 eV." @default.
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• W2012085026 date "2011-01-01" @default.
• W2012085026 modified "2023-10-16" @default.
• W2012085026 title "In-situ study of the diffusion-reaction mechanism in Mo/Si multilayered films" @default.
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• W2012085026 doi "https://doi.org/10.1016/j.apsusc.2010.10.049" @default.
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