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- W2012090973 abstract "In situ ${mathrm{Ga}}^{+}$ focused ion-beam (FIB) implantation has been used to control the nucleation of individual Ge islands on the Si(001) surface at the nanometer scale. The patterning technique consists of three steps: (i) low dose implantation, (ii) post-implantation annealing, and (iii) ultrahigh vacuum deposition of Ge. Varying the conditions for the Ga implantation and the post-implantation anneal allows four types of surface features to be created, and features that present a particular nanotopography after annealing act as island nucleation centers. Furthermore, because of Ga surface segregation during post-implantation annealing, Ge islands formed on patterned substrates present different characteristics compared to conventional Ge islands grown on the unmodified Si(001) surface. We discuss the influence of growth parameters and pattern feature topography on island nucleation, and identify the ideal growth conditions that lead to the formation of one coherent island on each pattern feature and the tightest island size distribution. The patterning technique described here can presumably be applied to systems other than $mathrm{Si}∕mathrm{Ge}$ and to techniques other than FIB that allow the creation of suitable local nanotopography." @default.
- W2012090973 created "2016-06-24" @default.
- W2012090973 creator A5014777583 @default.
- W2012090973 creator A5029586322 @default.
- W2012090973 creator A5049304673 @default.
- W2012090973 creator A5071097915 @default.
- W2012090973 date "2007-12-03" @default.
- W2012090973 modified "2023-10-16" @default.
- W2012090973 title "Nanometer-scale control of single quantum dot nucleation through focused ion-beam implantation" @default.
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- W2012090973 doi "https://doi.org/10.1103/physrevb.76.235301" @default.
- W2012090973 hasPublicationYear "2007" @default.
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