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• W2012093780 abstract "The effects of radiation damage exposure on InGaAs quantum wells and InAs quantum dots are compared using luminescence spectroscopy techniques. A large increase in the radiation resistance of the InAs quantum dots is observed and attributed to exciton localization in the quantum dots and a point defect strain gettering effect." @default.
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• W2012093780 date "1998-11-16" @default.
• W2012093780 modified "2023-10-16" @default.
• W2012093780 title "Argon ion damage in self-assembled quantum dots structures" @default.
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• W2012093780 doi "https://doi.org/10.1063/1.122635" @default.
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