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• W2012098457 endingPage "1440" @default.
• W2012098457 startingPage "1429" @default.
• W2012098457 abstract "The M 2 p core-level XPS peaks of doped elements in Ni 1- x M x S are observed at the binding energies of M in “M 2 S 3 ” rather than those of “MS” below and above the nonmetal-metal transition temperature ( T t ), indicating that the M atom are ionized to M 3+ and acts as shallow donor impuritites. Below T t the T 1/2 contribution with negative sign to the thermoelectric power ( S ) is superimposed on the usual degenerate semiconductive contribution with positive sign. It overcomes the latter contribution above a concentration ( x c ). The value of x c increases in the order of M=Ti, V and Cr. These results indicate that the T 1/2 contribution to S comes from variable range hopping through the localized states formed near E F within the narrow charge-transfer gap of the parent NiS. Above T t the sign of S is negative in the electron-doped Ni 1- x M x S as well as in the hole-doped Ni 1- x S, suggesting that they have the Fermi surface topology." @default.
• W2012098457 created "2016-06-24" @default.
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• W2012098457 date "1994-04-15" @default.
• W2012098457 modified "2023-10-01" @default.
• W2012098457 title "Effect of Early Transition-Metal (M=Ti, V and Cr) Doping on the Electronic Structure of Charge-Transfer Type Compound NiS Studied by Thermoelectric Power and X-Ray Photoemission Measurements" @default.
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• W2012098457 doi "https://doi.org/10.1143/jpsj.63.1429" @default.
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