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- W2012099085 abstract "Light-emitting diodes (LEDs) have been fabricated on GaAs-on-Si substrates grown by a hybrid method which combines molecular beam epitaxy (MBE) and liquid phase epitaxy. The LEDs had a low reverse leakage current and high stability of light intensity for an aging operation compared with MBE-grown LEDs. These results are attributed to a higher crystallinity in the hybrid-grown GaAs layers on Si substrates." @default.
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- W2012099085 date "1991-03-25" @default.
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- W2012099085 title "Optical and electrical properties of GaAs light‐emitting diodes grown on Si substrates by a hybrid method of molecular beam and liquid phase epitaxies" @default.
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- W2012099085 doi "https://doi.org/10.1063/1.104339" @default.
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