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- W2012103585 abstract "Several commercially available organometallic precursors have been evaluated for metallorganic chemical vapor deposition (MOCVD) of pure ruthenium films. Of these, only a dimer, [RuC5H5(CO)2]2, proved suitable for CVD. On patterned Si3N4 and flat barium strontium titanate (BST), pure, conductive, conformal ruthenium films were grown from this dimer when oxygen was used as a reaction gas. Without oxygen, significant amounts of carbon were incorporated into the film. Oxygen and substrate temperature effects on ruthenium CVD film growth were investigated by resistivity measurements, in situ X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). Growth conditions and possible mechanisms are discussed." @default.
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- W2012103585 date "2000-11-01" @default.
- W2012103585 modified "2023-10-10" @default.
- W2012103585 title "Evaluation of precursors for chemical vapor deposition of ruthenium" @default.
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- W2012103585 doi "https://doi.org/10.1016/s0040-6090(00)01356-0" @default.
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