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- W2012106329 abstract "We use scanning tunneling microscopy to show that Cl2 dosing of Cl-saturated Si(100)-(2x1) surfaces at elevated temperature leads to uptake beyond saturation and allows access to a new etching pathway. This process involves Cl insertion in Si-Si dimer bonds or backbonds, diffusion of the inserted Cl, and ultimately desorption of SiCl2. Investigations into the etch kinetics reveal that insertion occurs via a novel form of Cl2 dissociative chemisorption that is mediated by dangling bond sites. Upon dissociation, one Cl atom adsorbs at the dangling bond while the other can insert." @default.
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- W2012106329 date "2007-03-29" @default.
- W2012106329 modified "2023-10-17" @default.
- W2012106329 title "Cl Insertion on<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mi>Si</mml:mi><mml:mo stretchy=false>(</mml:mo><mml:mn>100</mml:mn><mml:mo stretchy=false>)</mml:mo><mml:mtext mathvariant=normal>−</mml:mtext><mml:mo stretchy=false>(</mml:mo><mml:mn>2</mml:mn><mml:mo>×</mml:mo><mml:mn>1</mml:mn><mml:mo stretchy=false>)</mml:mo></mml:math>: Etching Under Conditions of Supersaturation" @default.
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- W2012106329 doi "https://doi.org/10.1103/physrevlett.98.136104" @default.
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