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- W2012106446 abstract "High deposition rate ZnO:Al films have been produced at room temperature by reactive DC sputtering using a plasma emission monitoring (PEM) control system. We have investigated the relationship between structural, optical and electrical properties of the ZnO:Al films. Crystal structures of the films have been studied by X-ray diffraction. Optimum ZnO:Al films, with 17–40 Ω/□ sheet resistance range and transmittance approaching 88% in the visible region, exhibited a hexagonal ZnO structure with preferential (002) orientation and crystallite sizes of about 27 nm. Resistive transparent films displayed a more random orientation showing peaks at (100) and (102) orientations. Dark “metallic” films were shown to consist of mainly zinc. The optimal ZnO:Al film has been determined from a figure of merit based on power losses due to absorption and series resistance in the ZnO:Al films. It is highly transparent, with low resistance, pronounced (002) peak and large crystallite size." @default.
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- W2012106446 date "2012-07-01" @default.
- W2012106446 modified "2023-09-27" @default.
- W2012106446 title "Plasma emission monitoring (PEM) controlled DC reactive sputtered ZnO:Al thin films" @default.
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- W2012106446 doi "https://doi.org/10.1016/j.vacuum.2012.03.052" @default.
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