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- W2012123569 abstract "The annealing of radiation damage produced by room-temperature and 300°C implantations of 60 keV 72Ge to fluences greater than 1016/cm2 into 〈111〉 Si was investigated by backscattering and channeling analyses of 280 keV alpha particles. Implantation at room-temperature produced an amorphous layer which only partially reordered after anneal at 850°C. However, implantation at 300°C did not produce an amorphous layer, and after annealing at 1000°C, resulted in an essentially perfect crystalline alloy of SiGe having a uniform Ge concentration of 6 at.% over a depth of 1000 Å. These results are also consistent with optical reflectivity data obtained on the sample surfaces in the 3–5.5 eV spectrum." @default.
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- W2012123569 date "1981-12-01" @default.
- W2012123569 modified "2023-09-26" @default.
- W2012123569 title "High-fluence implantations of Ge into 〈111〉 Si" @default.
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- W2012123569 doi "https://doi.org/10.1016/0029-554x(81)90985-x" @default.
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