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- W2012129664 abstract "Using optical nuclear polarization (ONP) and nuclear magnetic resonance (NMR) techniques the silicon single crystal solid solutions containing impurity defects of a few rather than one kind have been studied. Application of the ONP techniques to the investigation of nonuniformly doped silicon has been demonstrated. The concentrations and energy fluctuations of donor levels have been determined in silicon doped with elements of III–V and transition groups. Solid solution decay processes have been studied by ONP techniques in silicon crystals doped with deep level impurities. Finally, ONP techniques have been applied to the investigations of semimagnetic semiconductors." @default.
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- W2012129664 date "1983-02-01" @default.
- W2012129664 modified "2023-09-27" @default.
- W2012129664 title "Electron localization on defects and optical nuclear polarization in disordered and semimagnetic semiconductors" @default.
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- W2012129664 doi "https://doi.org/10.1016/0378-4363(83)90253-x" @default.
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