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- W2012134411 abstract "In this work, we present a silicon nanocrystal memory showing single electron charging/discharging phenomena at room temperature. A clear staircase behavior in the drain current characteristic, measured as a function of the gate voltage and of time, is observed, where each step corresponds to the capture/emission of one electron in a silicon dot over the channel. A simple model, which allows for the evaluation of the average charging/discharging time in a silicon dot and for the impact of a charged silicon dot over the channel, is finally proposed." @default.
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- W2012134411 date "2003-10-01" @default.
- W2012134411 modified "2023-10-18" @default.
- W2012134411 title "Single electron charging and discharging phenomena at room temperature in a silicon nanocrystal memory" @default.
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- W2012134411 doi "https://doi.org/10.1016/s0038-1101(03)00177-1" @default.
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