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• W2012138636 abstract "In this paper, the determination of the defects induced by 20 MeV Au irradiations in hexagonal silicon carbide single crystals is discussed. The evolution of the irradiation-induced defects as a function of the ion fluence has been studied as a function of depth below the surface using 0.5–25 keV positron beam based Doppler annihilation-ray broadening spectrometry. Results show the detection of two different kinds of defects, depending on the ion fluence." @default.
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• W2012138636 date "2008-10-01" @default.
• W2012138636 modified "2023-09-25" @default.
• W2012138636 title "Determination of defects in 6H–SiC single crystals irradiated with 20MeV Au ions" @default.
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• W2012138636 doi "https://doi.org/10.1016/j.apsusc.2008.05.166" @default.
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