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• W2012142285 abstract "Room-temperature epitaxy of indium tin oxide (ITO) thin films was achieved on Si(111) substrates with an epitaxial CeO2 ultrathin buffer using a pulsed laser deposition technique. The epitaxial CeO2 buffer layer was also grown at room temperature. Reflection high-energy electron diffraction and pole figure X-ray diffraction analyses confirmed the formation of a double heteroepitaxial structure of ITO(111)/CeO2(111)/Si(111) with the epitaxial relationship of [−110]ITO//[−110]CeO2//[1–10]Si. The junction of [ITO: 100 nm thick/CeO2: 3 nm thick/p-Si(111)] fabricated at room temperature exhibited solar cell properties." @default.
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• W2012142285 date "2002-08-01" @default.
• W2012142285 modified "2023-09-26" @default.
• W2012142285 title "Room-temperature epitaxial growth of indium tin oxide thin films on Si substrates with an epitaxial CeO2 ultrathin buffer" @default.
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• W2012142285 doi "https://doi.org/10.1016/s0040-6090(02)00623-5" @default.
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