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- W2012145425 abstract "It is shown that phase microscopy is a simple and effective technique—complementary to photoetching, electron beam induced current and Raman scattering—for studying microscopic inhomogeneities of free carrier concentration in doped GaAs. In contrast with the other techniques, which are only sensitive to surface effects, phase microscopy can be used to study the microstructure in the bulk of the sample. This is particularly important for annealing experiments. Results on the annealing of defect inhomogeneities around dislocations (“Cottrell atmosphere”) for Si-doped GaAs are presented. A tentative model for the underlying defect reaction is discussed which, in contrast with earlier studies, is not based on Si diffusion and subsequent gettering but on the migration of native defects." @default.
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- W2012145425 date "1994-12-01" @default.
- W2012145425 modified "2023-09-27" @default.
- W2012145425 title "Variation of free charge carrier concentration in doped GaAs studied by phase microscopy" @default.
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- W2012145425 doi "https://doi.org/10.1016/0921-5107(94)90110-4" @default.
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