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- W2012146819 abstract "Abstract Using a RF magnetron sputtering, amorphous carbon (a-C) and N-doped a-C (a-C:N) thin films were fabricated as field electron emitter. These thin films were deposited on Si(0 0 1) substrate at several temperatures. The field emission property was improved for a-C thin films grown at higher substrate temperatures. Furthermore, a-C:N film exhibits field emission property better than that of undoped a-C film. These results are explained in terms of the change in surface morphology and structural properties of a-C film." @default.
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- W2012146819 date "2005-05-01" @default.
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- W2012146819 title "Field electron emission from amorphous carbon thin films grown by RF magnetron sputtering" @default.
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- W2012146819 doi "https://doi.org/10.1016/j.cap.2004.04.003" @default.
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