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- W2012147134 abstract "We have succeeded in growing epitaxial layers and multilayer heterostructures of In1−xGaxAs1−ySby quaternary and InAs0.92Sb0.08 ternary alloys lattice matched to GaSb by molecular beam epitaxy. High quality epilayers with lattice mismatch Δa/a∼8×10−4, excellent morphology, and efficient photoluminescence were grown. The surface reconstructions during growth of these quaternary and ternary alloys were also investigated using in situ reflection high-energy electron diffraction." @default.
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- W2012147134 date "1985-02-01" @default.
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- W2012147134 title "Molecular beam epitaxial growth of In1−<i>x</i>Ga<i>x</i>As1−<i>y</i>Sb<i>y</i> lattice matched to GaSb" @default.
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- W2012147134 doi "https://doi.org/10.1063/1.95659" @default.
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