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- W2012148064 abstract "In this work the application of photoacoustic technique (PA) for the study of recombination mechanisms in semiconductor substrates and heterostructures is briefly reviewed. A theoretical model which allows the investigation of nonradiative recombination time and surface recombination velocity was developed. We present the experimental values of such parameters obtained by fitting the theoretical curves to the experimental PA phase data for SiN:H/Si, AlGaAs/GaAs and InGaAsSb/GaSb single heterostructures." @default.
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- W2012148064 date "2000-07-01" @default.
- W2012148064 modified "2023-10-16" @default.
- W2012148064 title "Study of Nonradiative Recombination Mechanisms in Semiconductors by Photoacoustic Measurements" @default.
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- W2012148064 doi "https://doi.org/10.1002/1521-3951(200007)220:1<305::aid-pssb305>3.0.co;2-8" @default.
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